Infineon IDH10G65C5: A High-Performance 650 V GaN Discrete Power Transistor

The relentless pursuit of higher efficiency, greater power density, and improved thermal performance in power electronics is driving the transition from traditional silicon to wide-bandgap semiconductors. At the forefront of this revolution is Gallium Nitride (GaN), and Infineon Technologies, a global leader in power systems, has solidified its position with the introduction of the IDH10G65C5, a 650 V enhancement-mode GaN (e-mode GaN) discrete power transistor. This device is engineered to set new benchmarks in performance for a wide array of demanding applications.

Engineered for excellence, the IDH10G65C5 is built using a robust GaN-on-silicon substrate technology. Its core strength lies in its exceptionally low figure-of-merit (FOM), which translates to minimal switching losses and significantly higher efficiency compared to even the best-in-class superjunction silicon MOSFETs. This characteristic is paramount for systems operating at high switching frequencies, where reducing losses directly impacts overall performance and thermal management. The transistor's 650 V voltage rating provides a comfortable margin of safety for operation in universal offline power supplies (90 V AC – 277 V AC) and three-phase industrial systems, ensuring high reliability.

A key advantage of this e-mode HEMT (High Electron Mobility Transistor) is its simple voltage-driven operation. Unlike some GaN technologies that require complex negative voltage drive, the IDH10G65C5 can be driven directly by standard, widely-available Si MOSFET gate drivers with a positive voltage, typically around 6 V. This drastically simplifies circuit design, reduces component count, and accelerates time-to-market for engineers designing with GaN for the first time.

Furthermore, the device features an integrated Kelvin source connection within its TO-leadless (TOLL) package. This innovative packaging separates the high-current power loop from the gate drive loop, minimizing common source inductance. The result is a dramatic reduction in switching overshoot and ringing, enabling faster, cleaner, and more predictable switching transitions. This allows designers to push frequencies even higher without compromising electromagnetic interference (EMI) performance. The low on-resistance (R DS(on)) of 100 mΩ maximizes conduction efficiency, reducing power loss during the on-state and contributing to cooler operation.

The combination of these features makes the IDH10G65C5 an ideal solution for next-generation power conversion systems. It is particularly suited for high-efficiency servers and data center SMPS (Switch-Mode Power Supplies), telecom infrastructure, industrial motor drives, and premium consumer fast chargers and adapters. By enabling higher power density designs—allowing for smaller magnetics and capacitors—it helps manufacturers create more compact, lighter, and more energy-efficient end products.

ICGOODFIND: The Infineon IDH10G65C5 stands out as a top-tier discrete GaN power transistor that masterfully balances raw performance with design simplicity. Its high-voltage capability, ultra-low switching losses, and driver-friendly architecture make it a compelling choice for engineers aiming to unlock the full potential of GaN technology in their high-performance power applications.

Keywords: GaN Transistor, High Efficiency, High Switching Frequency, 650 V Rating, Power Density.