Infineon IPA50R280CE: Advanced 280mΩ Power MOSFET for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics drives the continuous innovation in power semiconductor technology. At the forefront of this evolution is the Infineon IPA50R280CE, a state-of-the-art 500V CoolMOS™ CE power MOSFET engineered to set new benchmarks in performance for demanding applications.

This MOSFET is characterized by its exceptionally low typical on-state resistance (R DS(on)) of just 280mΩ. This pivotal feature is the cornerstone of its high-efficiency performance. By minimizing conduction losses, the device ensures that more energy is delivered to the load and less is wasted as heat. This is particularly critical in systems operating continuously or under heavy load, where even marginal losses can compound, leading to significant energy waste and thermal management challenges. The superior switching performance of the CoolMOS™ CE technology further reduces switching losses, making it an ideal choice for high-frequency circuits.

The primary applications leveraging these advantages include:

Switched-Mode Power Supplies (SMPS): Especially in server, telecom, and industrial power supplies where efficiency standards like 80 PLUS Titanium are paramount.

Power Factor Correction (PFC): Its robust performance is crucial in boost PFC stages, improving the overall efficiency and power quality of AC-DC converters.

Motor Control and Drives: Provides efficient and reliable switching for inverters controlling motors in industrial and appliance settings.

Renewable Energy Systems: Such as solar inverters, where maximizing energy conversion efficiency is a key objective.

Beyond its electrical prowess, the IPA50R280CE is built with robustness and reliability in mind. It offers a high level of durability and avalanche ruggedness, ensuring stable operation even under stressful conditions like voltage spikes or inductive load switching. This reliability, combined with its high efficiency, allows designers to create more compact products by simplifying cooling requirements, thereby increasing overall power density.

ICGOOODFIND: The Infineon IPA50R280CE stands as a superior component in the power MOSFET landscape, masterfully balancing ultra-low conduction losses with fast switching capabilities. It is an optimal solution for designers aiming to push the boundaries of efficiency and power density in their next-generation power conversion systems.

Keywords: High-Efficiency, Low RDS(on), Power MOSFET, CoolMOS™ CE, Switching Performance.