HMC194AMS8ETR: A 5V to 5V GaAs pHEMT MMIC SPDT Reflective Switch from Analog Devices

Release date:2025-09-04 Number of clicks:97

**HMC194AMS8ETR: A 5V to 5V GaAs pHEMT MMIC SPDT Reflective Switch from Analog Devices**

The **HMC194AMS8ETR** from Analog Devices represents a high-performance, single-pole double-throw (SPDT) reflective switch engineered for a broad spectrum of RF and microwave applications. Fabricated on an advanced **GaAs pHEMT** (Gallium Arsenide pseudomorphic High Electron Mobility Transistor) process, this monolithic microwave integrated circuit (MMIC) is designed to operate with a single positive control voltage ranging from **0V to +5V**, making it exceptionally easy to integrate into modern **+5V digital systems**.

A key feature of this component is its **reflective switch architecture**. Unlike absorptive switches that terminate the unused port to a matched load, a reflective switch presents an open or short circuit to the RF signal when in the off state. This design simplifies the internal circuitry, leading to superior performance in critical parameters. The HMC194AMS8ETR excels with **very high isolation**, exceeding 40 dB at 1 GHz and remaining impressive at higher frequencies. Concurrently, it maintains **low insertion loss**, typically below 0.5 dB at 1 GHz, ensuring minimal signal degradation in the transmission path.

The device operates across an extremely wide frequency band from **DC to 8 GHz**, making it a versatile solution for applications from baseband up to C-band. This wide bandwidth covers numerous wireless communication systems, test and measurement equipment, and military and aerospace radar and electronic warfare (EW) systems. Its **MSOP8 package** offers a compact footprint, which is crucial for space-constrained PCB designs, while still providing robust thermal and electrical performance.

The simplicity of its control interface is another significant advantage. The switch requires only a single, positive control voltage, with a **high input IP3 (Third-Order Intercept Point)** of approximately +55 dBm, ensuring excellent linearity and handling of high-power signals without generating significant intermodulation distortion. This combination of wide bandwidth, high isolation, low loss, and strong linearity makes the HMC194AMS8ETR an ideal choice for signal routing, TDD systems, and transmit/receive switching modules.

**ICGOOODFIND**: The HMC194AMS8ETR is a superior reflective SPDT switch that delivers a potent combination of wide bandwidth (DC-8 GHz), high isolation, low insertion loss, and simple +5V control, all housed in a compact MSOP8 package for streamlined integration into high-frequency systems.

**Keywords**: GaAs pHEMT, Reflective Switch, High Isolation, Wideband DC-8 GHz, +5V Single Control.

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