Infineon IPLU300N04S4R8XTMA1: High-Performance 40V OptiMOS 5 Power MOSFET

In the realm of power electronics, efficiency, power density, and thermal performance are paramount. Addressing these critical demands, Infineon Technologies introduces the IPLU300N04S4R8XTMA1, a standout member of its advanced OptiMOS™ 5 40V power MOSFET family. This device is engineered to set a new benchmark for performance in a wide array of demanding applications, from server and telecom power supplies to industrial motor drives and battery management systems.

The cornerstone of this MOSFET's superiority is its exceptionally low typical on-state resistance (R DS(on)) of just 0.8 mΩ at 10 V. This ultra-low resistance is a game-changer, as it directly translates to minimized conduction losses. When a MOSFET is in its on-state, the primary source of power loss is the heat generated due to its R DS(on). By reducing this value to a mere 0.8 mΩ, the IPLU300N04S4R8XTMA1 ensures that more power is delivered to the load and less is wasted as heat, significantly boosting overall system efficiency.

Furthermore, the device boasts an outstanding figure-of-merit (FOM), which indicates a superior balance between low gate charge (Q G) and low R DS(on). This optimal switching performance is crucial for high-frequency operation. Designers can push switching frequencies higher, enabling the use of smaller passive components like inductors and capacitors. This leads to a substantial increase in power density, allowing for the creation of more compact and lighter end-products without compromising on power output or performance.

The IPLU300N04S4R8XTMA1 is housed in an Infineon’s proprietary S4 (SuperSO8) package. This package is renowned for its excellent thermal characteristics and low parasitic inductance. Its superior thermal impedance ensures that heat is efficiently drawn away from the silicon die, allowing the component to handle high continuous drain currents (I D) of up to 300 A. This robust thermal management is vital for maintaining reliability and longevity under heavy load conditions. The package also features an exposed top side for optional cooling, providing designers with greater flexibility in thermal management strategies.

Committed to the highest quality standards, this MOSFET is 100% avalanche tested, guaranteeing ruggedness and resilience against unexpected voltage spikes and harsh operating environments. This makes it an exceptionally reliable choice for mission-critical applications.

ICGOOODFIND: The Infineon IPLU300N04S4R8XTMA1 is a pinnacle of power MOSFET design, offering an unparalleled combination of ultra-low R DS(on), high current handling, and superior thermal performance in a compact package. It empowers engineers to design next-generation power systems that are simultaneously more efficient, more powerful, and smaller than ever before.

Keywords: OptiMOS 5, Low R DS(on), High Power Density, S4 Package, High Efficiency.