Infineon IPB180N04S3-02: High-Performance OptiMOS Power MOSFET for Advanced Automotive and Industrial Applications

The relentless drive towards greater efficiency, power density, and reliability in automotive and industrial systems demands semiconductor components that push the boundaries of performance. Addressing this need, the Infineon IPB180N04S3-02 stands out as a premier OptiMOS power MOSFET engineered to meet the rigorous requirements of next-generation applications.

This device is characterized by its exceptionally low typical on-state resistance (RDS(on)) of just 1.8 mΩ at a gate voltage of 10 V. This ultra-low resistance is a cornerstone of its performance, directly translating into minimized conduction losses. Whether deployed in a high-current motor drive or a DC-DC converter, this attribute ensures that more power is delivered to the load and less is wasted as heat, leading to superior system efficiency and reduced thermal management complexity.

Beyond raw efficiency, the IPB180N04S3-02 is built for robustness. It features a high maximum current rating (ID) of 180 A, allowing it to handle significant power surges and continuous high-load conditions with ease. This makes it an ideal candidate for demanding automotive environments, such as in electric power steering (EPS), braking systems, and advanced driver-assistance systems (ADAS), where failure is not an option. Furthermore, its qualification for automotive applications (AEC-Q101) guarantees that it meets the stringent quality and reliability standards necessary for operating in extreme temperatures and under harsh conditions.

The benefits extend deeply into the industrial sphere as well. For industrial motor controls, robotics, and power supplies, the MOSFET's low switching losses contribute to higher switching frequencies. This allows designers to use smaller passive components like inductors and capacitors, ultimately reducing the overall system size and cost while improving performance.

Packaged in the robust and space-efficient D2PAK 7-pin format, the device offers an excellent power-to-footprint ratio and enhanced thermal performance due to its exposed pad, facilitating effective heat dissipation away from the silicon die.

ICGOOODFIND: The Infineon IPB180N04S3-02 is a high-efficiency, high-current power MOSFET that sets a benchmark for performance in automotive and industrial sectors. Its combination of ultra-low RDS(on), high current capability, and automotive-grade reliability makes it a superior choice for designers aiming to maximize efficiency and power density in their most challenging applications.

Keywords: Power MOSFET, Ultra-low RDS(on), Automotive Grade (AEC-Q101), High Current Handling, Power Efficiency.