Infineon IPD60R3K3C6ATMA1: 600V CoolMOS™ C6 Power Transistor for High-Efficiency Applications

The demand for high-efficiency power conversion continues to grow across industries such as consumer electronics, industrial systems, and renewable energy. Meeting this demand requires power semiconductors that combine low switching losses, high reliability, and thermal stability. The Infineon IPD60R3K3C6ATMA1, a 600V CoolMOS™ C6 power transistor, stands out as an advanced solution tailored for high-performance switching applications.

Built on Infineon’s superjunction (SJ) technology, this MOSFET delivers exceptional efficiency in hard- and soft-switching topologies. With a remarkably low on-state resistance (RDS(on) of just 0.33Ω, it minimizes conduction losses, leading to reduced heat generation and improved system reliability. The device also features ultralow gate charge (Qg) and low output capacitance, which significantly cut switching losses and enable higher switching frequencies. This allows designers to use smaller magnetics and capacitors, ultimately reducing the size and cost of power supplies.

Another highlight of the IPD60R3K3C6ATMA1 is its enhanced ruggedness and durability. It offers improved avalanche robustness and greater tolerance to high-voltage transients, making it suitable for harsh operating environments. The transistor is also designed with ease-of-use in mind, featuring a low gate threshold voltage that simplifies drive circuit design and ensures compatibility with a wide range of controllers.

Target applications include switch-mode power supplies (SMPS), power factor correction (PFC) stages, motor drives, lighting systems, and solar inverters. Its high thermal performance and TO-220 package make it an excellent choice for space-constrained and thermally challenging designs.

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ICGOOODFIND: The Infineon IPD60R3K3C3C6ATMA1 sets a high standard with its low RDS(on), superior switching characteristics, and robustness—making it a top-tier choice for modern high-efficiency power systems.

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Keywords:

High-Efficiency,

CoolMOS™ C6,

Low RDS(on),

Fast Switching,

600V MOSFET.