Infineon IPD65R250E6: High-Performance 650V CoolMOS Power Transistor

The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics drives continuous innovation in semiconductor technology. At the forefront of this evolution is Infineon Technologies with its IPD65R250E6, a 650V CoolMOS™ power transistor that sets a new benchmark for high-performance switching applications.

Engineered on Infineon's advanced superjunction (SJ) technology, the IPD65R250E6 is specifically designed to meet the demanding requirements of modern switch-mode power supplies (SMPS), server and telecom power systems, industrial motor drives, and renewable energy inverters. Its core strength lies in its exceptionally low specific on-state resistance (R DS(on)) of just 250 mΩ maximum, coupled with a robust 650V drain-source voltage rating. This optimal combination ensures minimal conduction losses, allowing for cooler operation and significantly higher overall system efficiency.

A key feature of this CoolMOS™ device is its outstanding switching performance. The transistor exhibits very low gate charge (Q G) and low effective output capacitance (C OSS(eff)), which are critical parameters for achieving high switching frequencies. By enabling faster switching, the IPD65R250E6 allows designers to reduce the size of magnetic components like transformers and inductors, thereby increasing power density and reducing the overall form factor of the end product.

Furthermore, the IPD65R250E6 is renowned for its superior body diode robustness, which enhances its reliability in hard-switching and inductive load applications. This intrinsic quality ensures smoother operation and greater resilience against voltage spikes and reverse recovery events. The device also offers a high level of avalanche energy capability, providing an additional safety margin in rugged operating environments where overvoltage conditions may occur.

Packaged in the industry-standard TO-220 FullPAK, the device offers excellent creepage and clearance distances, making it suitable for designs with high isolation requirements. Its ease of mounting and excellent thermal characteristics further simplify the design-in process for engineers.

ICGOOODFIND: The Infineon IPD65R250E6 stands as a pinnacle of power transistor design, masterfully balancing ultra-low losses, high switching speed, and formidable ruggedness. It is an ideal cornerstone for engineers striving to build next-generation, high-efficiency, and compact power conversion systems.

Keywords: High Efficiency, Superjunction Technology, Low R DS(on), Fast Switching, High Power Density.